GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells
نویسندگان
چکیده
منابع مشابه
Images of edge current in InAs/GaSb quantum wells.
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of tem...
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The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4940880